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| BAS40TW Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS | |||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
x Pow Dissipation PD=200mW Tamb=25к
x IF=200mA
⢠Epoxy meets UL 94 V-0 flammability rating
⢠Moisture Sensitivity Level 1
Maximum Ratings
x Operating Temperature: -55к to +125к
x Storage Temperature: -65к to +125к
BAS40TW
200mW 40Volt
Schottky Barrier
Diode
SOT-363
G
Electrical Characteristics @ 25qC Unless Otherwise Specified
Reverse Breakdown
Voltage
V(BR)R
40V
IR=10µA
Maximum
Instantaneous
VF
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
IR
Voltage
Typical Junction
Capacitance
CD
380mV IFM = 1mA;
1000mV IFM = 40mA;
200nA VR=30Volts
5pF
Measured at
1.0MHz, VR=0V
Reverse Recovery
Time
Trr
IF=10mA through
5nS
IR=10mA to
IR=1mA
B
C
A
H
K
M
J
D
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C
.085
.096
2.15
2.45
D
.026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Marking: K43
Revision: A
www.mccsemi.com
1 of 3
2011/01/01
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