BAS32L Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diode

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TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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Features
l High-Speed Switching and High Reverse Breakdown Voltage
l Moisture Sensitivity Level 1
l Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Mechanical Data
l Case: MiniMELF, Glass
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: Indicated by Cathode Band
l Weight: 0.05 grams ( approx.)
Maximum Ratings @ 25^oC Unless Otherwise Specified
Characteristic
Symbol
Peak Repetitive Reverse Voltage VRRM
Continuous reverse Voltage
VR
Continuous forward current
IF
Repetitive peak Forward Current IFRM
Non-rep. Peak Forward Current
t=1 us
t=1 ms
IFSM
t= 1 s
Min
Max
75
75
200
450
Unit
V
V
mA
mA
4
1
A
0.5
Power Dissipation
Pd
500
mW
Thermal Resistance(Note 2)
R
350
K/W
Operation/Storage Temp. Range Tj, TSTG
-65
200
o_C
Electrical Characteristics @ 25^oC Unless Otherwise Specified
Charateristic
Symbol Min Max Unit
Test Cond.
Reverse Breakdown Volt. V(BR)R
Reverse Current
IR
Forward Voltage
VF
100 -----
25
-----
5
50
100
620 750
--- 1000
--- 930
V IR=100uA
nA ^VR=20V
uA ^VR=75V
uA VR=20V;Tj=150^oC
uA _{VR=75V;Tj=150}^o_C
mV ^IF=5mA
mV ^IF=100mA
mV _{IF=100mA; Tj=100}^o_C
Junction Capacitance
Cj ----- 2.0 pF VR=0V, f=1.0MHz
I F = IR=10mA
Reverse Recovery Time trr ----- 4 ns Irr=1mA
R L=100OHMS
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Valid provided that electrodes are kept at ambient temperature
3. Device mounted on an FR4 printed-circuit board.
BAS32L
High Speed
Switching Diode
MINIMELF
Cathode Band
C
B
A
DIMENSION
DIM
INCHES
MM
NOTE
MIN MAX MIN MAX
A
.130 .146
3.30 3.70
B .008 .016 0.20 0.40
C .055 .059 1.40 1.50
SUGGESTED SOLDER
PAD LAYOUT
.165
.075
.030
Revision: A
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2011/01/01