BAS316 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diode

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TM
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BAS316
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Surface Mount Package Ideally Suited for Automatic Insertion
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 100V
• Repetitive peak reverse voltage: max. 100V
• Repetitive peak forward current: max. 500mA
Mechanical Data
. _{• Marking: A6}
• Polarity: Indicated by Cathode Band
Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Symbol
Limits
Unit
DC Reverse Voltage
V_R
100
V
Forward Current
Total Device Dissipation
I_F
250
mA
P_D
400
mW
Junction and Storage temperature
T _j，P_stg
-65~+150
℃
Non-repetitive peak forward current
t=1us
I_FSM
4
t=1ms
1
A
t=1s
0.5
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Symbol Test Conditons MIN MAX UNIT
Reverse breakdown voltage V_BR I_R=100uA
100 … V
I_F=1mA
… 715
Forward voltage
V_F ^IF=10mA
I_F=50mA
… 855
mV
… 1000
I_F=150mA
… 1250
Reverse leakage current
Reverse recovery time
I_R
V_R=25V
V_R=75V
T_rr
I_F=I_R=10mAdc,
R_L=100Ω
… 0.03
uA
…1
… 4 ns
Diode capacitance
C_{D VR=0V,f =1MHz} … 1.5 pF
High Speed
Switching Diode
400mW
SOD-323
A
B
C
E
H
D
G
J
DIMENSIONS
DIM
INCHES
MM
NOTE
MIN MAX MIN MAX
A .090 .107 2.30 2.70
B .063 .071 1.60 1.80
C .045 .053 1.15 1.35
D .031 .045 0.80 1.15
E .010 .016 0.25 0.40
G .004 .018 0.10 0.45
H .004 .010 0.10 0.25
J ----- .006 ----- 0.15
SUGGESTED SOLDER
PAD LAYOUT
0.074"
0.027”
0.022”
Revision: B
www.mccsemi.com
1 of 4
2011/04/20