BAS16T Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
x Ultra-Small Surface Mount Package
x For General Purpose Switching Applications
x High Conductance
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
BAS16T
BAW56T
BAV70T
BAV99T
150mW 85Volt
Switching Diode
BAS16T
Marking : A2
BAW56T
Marking : JD
BAV70T
Marking : JJ
Maximum Ratings
x Operating Temperature: -55qC to +150qC
x Storage Temperature: -55qC to +150qC
BAV99T
Marking : JE
SOT-523
A
D
BC
Electrical Characteristics @ 25qC Unless Otherwise Specified
E
Peak Repetitive
Reverse Voltage
Continuous
Forward Current
Power Dissipation
Peak Forward Surge
Current @t=1.0us
@t=1.0ms
@t=1.0s
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
V_RRM
I_F
P_D
I_FSM
V_F
I_R
85V
75mA
150mW
4.0A
1.0A
0.5A
715mV
855mV
1000mV
1250mV
I_F = 1mA
I_F = 10mA;
I_F = 50mA
I_F = 150mA
2PA VR=75Volts
0.03PA ^VR^=25Volts
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
NOTE
Typical Total
Capacitance
Reverse Recovery
Time
C_T
1.5pF
Measured at
1.0MHz, V_R=0V
T_rr
4nS IF = IR = 10mA,
Irr = 0.1 x IR,
RL = 100:
Revision: A
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1 of 3
2011/01/01