BAP64-04W Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon PIN diode

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
BAP64-04W
BAP64-05W
BAP64-06W
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Low diode capacitance
• Low diode forward resistance
General
Purpose Pin Diodes
200mW
Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Symbol
Limits
Unit
SOT-323
A
D
3
Continuous Reverse Voltage
Forward Current
Power Dissipation(T_A=90^oC)
Junction and Storage temperature
Thermal Resistance Junction to
Ambient
V_R
I_F
P_D
T _j，P_stg
RthJA
175
100
200
-55~+150
625
V
mA
mW
℃
o_C/W
1
2
F
E
BC
G
K
H
J
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Reverse Voltage
Leakage
Current
Symbol Min. TYP Max. Unit
I_R
10
uA
1.0
Conditions
V_R=175V
V_R=20V
Forward voltage
V_F
1.1
V I_F=50mA
Diode capacitance ^Cd1
C_d2
0.52
0.37 0.5
pF V_R=0V,f=1MHz
pF V_R=1V,f=1MHz
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.083
.096
2.10
2.45
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.006
.016
.15
.40
Suggested Solder
Pad Layout
0.70
C_d3
0.23 0.35 pF V_R=20V,f=1MHz
0.90
r_D
20 40 Ω I_F=0.5mA, f=100MHz
1.90
Diode forward
r_D
10 20 Ω I_F=1mA , f=100MHz
resistance
r_D
2 3.8 Ω I_F=10mA , f=100MHz
r_D
Charge carrier
life time
τL
Series inductance
BAP64-04W/06W Ls
BAP64-05W
0.7 1.35 Ω I_F=100mA , f=100MHz
when switched from
1.55
μS I_{F=10mAtoIR=6mA;RL=}
100Ω;measured at I_R=3mA
1.6
nH _{IF=100mA, f=100MHz}
1.4
nH _{IF=100mA, f=100MHz}
0.65
0.65
Revision: C
www.mccsemi.com
1 of 3
2013/09/24