8050SS-C Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Transistors

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 1.0Watts(Tamb=25^OC) of Power Dissipation.
• Collector-current 1.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Marking : 8050SS
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
B
C_E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
ICEO
IEBO
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Collector-Emitter Breakdown Voltage
(I_C=0.1mAdc, I_B=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=40Vdc, I_E=0)
Collector Cutoff Current
(V_CE=20Vdc, I_B=0)
Emitter Cutoff Current
(V_EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
40
---
Vdc
25
---
Vdc
5.0
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
---
0.1 uAdc
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
VBE
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
DC Current Gain
(I_C=800mAdc, V_CE=1.0Vdc)
Collector-Emitter Saturation Voltage
(I_C=800mAdc, I_B=80mAdc)
Base-Emitter Saturation Voltage
(I_C=800mAdc, I_B=80mAdc)
Base- Emitter Voltage
(I_C=10mAdc,VCE=1V)
SMALL-SIGNAL CHARACTERISTICS
120
300
---
40
---
---
---
0.5
Vdc
---
1.2
Vdc
---
1.0
Vdc
f_T
Transistor Frequency
100
---
MHz
(IC=50mAdc, VCE=10Vdc, f=30MHz)
CLASSIFICATION OF HFE (1)
Rank
Range
C
120-200
D
160-300
8050SS-C
8050SS-D
NPN Silicon
Transistors
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.170
.190
B
.170
.190
C
.550
.590
D
.010
.020
E
.130
.160
G
.096
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
Revision: A
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2011/03/23