2SD874-Q Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Power Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• Power amplifier applications
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
25
30
5
1
500
-55 to +150
-55 to +150
Unit
V
V
V
A
mW
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Type Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=2mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=10uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
ICBO
Collector-Base Cutoff Current
(VCB=20Vdc,IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=4Vdc, IC=0)
ON CHARACTERISTICS
25
---
---
Vdc
30 ---
---
Vdc
5
---
---
Vdc
--- --- 0.1 uAdc
--- --- 0.1 uAdc
hFE
VCE(sat)
VBE(sat)
fT
Cob
Forward Current Transfer ratio
(IC=500mAdc, VCE=10Vdc)
85
(IC=1.0Adc, VCE=5Vdc)
50
Collector-Emitter Saturation Voltage
---
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
---
(IC=500mAdc,IB=50mAdc)
Transistor Frequency
---
(IC=50mAdc, VCE=10Vdc, f=200MHz)
Collector Output Capacitance
---
(VCB=10Vdc, IE=0, f=1MHz)
--- 340
--- ---
--- 0.4
--- 1.2
200 ---
20 ---
---
---
Vdc
Vdc
MHz
pF
Classification OF hFE(1)
Rank
Range
Marking
Q
85-170
ZQ
R
120-240
ZR
S
170-340
ZS
2SD874-Q
2SD874-R
2SD874-S
NPN Silicon
Power Transistors
SOT-89
A
B
K
E
C
D
G
H
J
F
1
2
3
1. Base
2. Collector
3. Emitter















 


 

 











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