2SD468 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
x Low Frequency Power Amplifier.
x Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
x Complementary pair with 2SB562
2SD468
NPN Epitaxial
Silicon Transistor
TO-92L
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
20
V
25
V
5.0
V
1.0
A
0.9
W
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
(IC=10Ó´Adc, IE=0)
BVCEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
BVEBO
Emitter-Base Breakdown Voltage
(IE=0.01mAdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=20Vdc,IE=0)
IEBO
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
ON CHARACTERISTICS
20 ---
---
Vdc
25 ---
---
Vdc
5.0 ---
---
Vdc
--- --- 1000 nAdc
--- --- 1000 nAdc
hFE
DC Current gain
(IC=500mAdc, VCE=2.0Vdc)
VBE(on) Base-Emitter On Voltage
(VCE=2.0Vdc, IC=500mAdc)
VCE(sat) Collector-Emitter Saturation Voltage
(IC=0.8Adc, IB=80mAdc)
fT
Current Gain Bandwidth Product
(VCE=2.0Vdc, IC=500mAdc)
Cob
Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
(1) hFE Classification B: 85~170, C: 120~240
85 --- 240 ---
--- --- 1.0 Vdc
--- --- 0.5 Vdc
--- 190 --- MHz
--- 22 ---
pF
BC E
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.146
.161
B
.157
---
3.700
4.10
4.000
---
C
---
0.063
---
1.600
D
.014
.018
0.350
0.450
E
.050
.062
F
.185
.201
1.280
4.700
1.580
5.100
G
.307
.323
H
.543
.559
J
.024
.031
7.800
13.80
.600
8.200
14.20
.800
K
.014
.022
L
.050
M
.096
.104
0.350
.550
1.270
2.440
2.640
Revision: 1
www.mccsemi.com
1 of 4
2009/04/24