2SD1898-P Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Power Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
2SD1898-P
2SD1898-Q
2SD1898-R
Features
• High VCEO, VCEO=80V
• High I_C, I_C=1.0A(DC)
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V_CEO
VCBO
V_EBO
IC
P_C
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, DC
Pulse⁽¹⁾
Collector Power Dissipation⁽²⁾
Value
100
80
5.0
1.0
2.0
0.5
2.0


Unit


V


V


V


A




W


T_J
T_STG
Junction Temperature
Storage Temperature
-55 to +150
-55 to +150
O_C


O_C


Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol
Parameter
Min Typ Max Units



OFF CHARACTERISTICS


V_CEO
V_CBO
Collector-Emitter Breakdown Voltage 80 ---
(IC=1.0mAdc)
Collector-Base Breakdow n Voltage 100 ---
---
---
Vdc

Vdc

(I_C=50uAdc)


V_EBO
Emitter-Base Breakdown Voltage
5.0
---
---
Vdc

(I_E=50uAdc)


I_CBO
Collector Cutoff Current
--- --- 1.0 uAdc

(V_CB=80Vdc)


I_EBO
Emitter Cutoff Current
(V_EB=4.0Vdc, I_C=0)
---
--- 1.0 uAdc

hFE
DC Current Transfer Ratio⁽³⁾
82 --- 390 ---
(V_CE=3.0Vdc, I_C=0.5Adc)
VCE(sat)
Collector-Emitter Saturation Voltage
(I_C/I_B=500mA/20mA)
--- 0.15 0.4 Vdc
f_T
Transition Frequency
(V_CE=10Vdc, I_E=50mAdc,
f=100MHz)
--- 100 --- MHz
C_ob
Output Capacitance
---
20 ---
pF
(V_CB=10Vdc, I_E=0, f=1.0MHz)
(1) Pw=20ms, duty=1/2
(2) When mounted on a 40x40x0.7mm ceramic board.
(3) Measured using pulse current
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
Q
120-270
DF
R
180-390
NPN Silicon
Powe
r Transistors








SOT-89








A
B
K








E
C


D




G

H
J

^F








1

2
3
1. OUT
2. GND
3. IN















 


 

 




.061



1.55


25




























 

REF.








Revision: A
www.mccsemi.com
1 of 2
2011/01/01