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2SC4672-P Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Plastic-Encapsulate Transistors
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
2SC4672-P
2SC4672-Q
Features
• Ideally Suited For Automatic Instertion
• Untral Small Surface Mount Package
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings @ Ta = 25ć(unless otherwise noted)
Symbol
Parameter
Value
IC
Collector Current
2
PD
Total Device Dissipation
0.5
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Unit
A
W
к
к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc,IB=0)
50
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=50uAdc,IE=0)
60
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=50uAdc,IC=0)
6
ICBO
Collector-Base Cutoff Current
(VCB=60Vdc, IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=5Vdc, IC=0)
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=0.5Adc, VCE=2Vdc)
82
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1Adc, IB=50mAdc)
fT
Transition Frequency
(VCE=2Vdc,IC=500mAdc,f=100MHZ)
Cob
Collector Output Capacitance
(VCB=10Vdc,IE=0,f=1MHZ)
h CLASSIFICATION OF FE
Rank
P
Range
82-180
Marking
DKP
Max
Units
V
V
V
0.1
µAdc
0.1
uAdc
270
0.35
210(typ)
25(typ)
Vdc
MHZ
PF
Q
120-270
DKQ
NPN
Plastic-Encapsulate
Transistors

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1
A
B
H
F
2
3
K
E
J
1.BASE
2.COLLECTOR

3.EMITTER












 


 

 




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REF.








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