2SC4215-R Datasheet, PDF (1/3 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SC4215-R
2SC4215-O
2SC4215-Y
Features
• Small reverse transfer capacitance: Cre= 0.55pF(typ.)
• Low V oise figure: NF=2dB (typ.) (f=100 MHz)
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ, TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction and Storage Temperature
Rating
30
40
4
20
100
-55 to +150
Unit
V
V
V
mA
mW
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
Collector -base breakdown voltage
V(BR)CBO
(IC=100µA, IE= 0)
40
V
V(BR)CEO
Collector-emitter breakdown voltage
(IC=1mA, IB= 0)
30
V
V(BR)EBO
Emitter-base breakdown voltage
(IE=100µA, Ic= 0)
4
V
ICBO
Collector cut-off current
(VCB=40V,IE=0)
0.1
µA
IEBO
Emitter cut-off current
(VEB=4V, Ic= 0)
0.5
µA
hFE
DC Current Gain
(VCE=6V,IC=1mA)
40
200
CC rbb
Collector-base time constant
(VCE=6V, Ic=1mA,f=30MHz)
25
ps
Cre
Reverse transfer capacitance
(VCB=10V, f=1.0MHz)
0.55
pF
fT
Transition frequency
(VCE=6V, Ic=1mA,)
260
550
MHz
NPN Silicon
Epitaxial Transistors
SOT-323
A
D
C
BC
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
Suggested Solder
Pad Layout
0.70
NOTE
hFE CLASSIFICATION
Rank
Ramge
Marking
R
40~80
QR
O
70~140
QO
Y
100~200
QY
0.90
1.90 mm
0.65
0.65
Revision: A
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2011/01/01