2SC2881-O Datasheet, PDF (1/3 Pages) Micro Commercial Components – NPN Silicon Power Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• With SOT-89 package
• Power amplifier applications
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
IB
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
120
V
120
V
5.0
V
800
mA
160
mA
500
mW
1000(Note 1)
150
к
-55 to +150
к
Note 1: Mounted on ceramic substrate (250mm² x 0.8t)
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ. Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* 120 ---
---
Vdc
(IC=10mAdc, IB=0)
V(BR)EBO Collector-Emitter Breakdown Voltage*
5
---
Vdc
(IE=1mAdc, IC=0)
ICBO
Collector-Base Cutoff Current
(VCB=120Vdc,IE=0)
--- --- 0.1 uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
--- --- 0.1 uAdc
ON CHARACTERISTICS
hFE
VCE(sat)
VBE
fT
Cob
Forward Current Transfer ratio
(IC=0.1Adc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=0.5Adc, IB=50mAdc)
Base-Emitter Voltage
(IC=0.5Adc, VCE=5.0Vdc)
Transition Frequency
(IC=0.1Adc, VCE=5.0Vdc)
Collector Output Capacitance
(VCB=10V, IE=0, f=1MHz)
80 --- 240
--- --- 1.0
--- --- 1.0
--- 120 ---
--- --- 30
---
Vdc
Vdc
MHz
pF
CLASSIFICATION OF HFE
Rank
O
Y
Range
80-160
120-240
Marking
CO1
CY1
2SC2881-O
2SC2881-Y
NPN Silicon
Power Transistors
SOT-89
A
B
K
E
C
D
G
H
J
F
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER















 


 

 











25




























 










Revision: A
www.mccsemi.com
1 of 3
2011/01/01