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| 2SC2873-O Datasheet, PDF (1/4 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistors | |||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
2SC2873-O
2SC2873-Y
Features
x Low saturation voltage
x High speed switching time
x Complementary to 2SA1213
⢠Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
⢠Epoxy meets UL 94 V-0 flammability rating
⢠Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
50
V
50
V
5.0
V
2.0
A
0.5
W
150
к
-55 to +150
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
V (BR)CBO
V (BR)EBO
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=0.1mAdc, IB=0)
Emitter-Base Breakdown Voltage
(IE=0.1mAdc, IC=0)
ICBO
Collector-Base Cutoff Current
(VCB=50Vdc,IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTIC
50 ---
---
Vdc
50 ---
---
Vdc
5.0 ---
---
Vdc
--- --- 0.1 uAdc
--- --- 0.1 uAdc
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
DC Current Gain
(IC=0.5Adc, VCE=2.0Vdc)
DC Current Gain *
(IC=2.0Adc, VCE=2.0Vdc)
Collector-Emitter Saturation Voltage
(IC=1.0Adc, IB=0.05Adc)
Base-Emitter Saturation Voltage
(IC=1.0Adc,IB=0.05Adc)
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
Collector output capacitance
(VCB=10Vdc,IE=0, f=1.0MHz)
CLASSIFICATION OF HFE (1)
Rank
O
Range
70-140
Marking
MO
70 ---
20 ---
--- ---
--- ---
--- 120
--- 30
240
---
---
---
0.5 Vdc
1.2 Vdc
--- MHz
---
pF
Y
120-240
MY
NPN Silicon
Epitaxial Transistors
C
D
G
1
SOT-89
A
B
K
E
H
J
F
2
3
1. Base
2. Collector
3. Emitter
Revision: A
www.mccsemi.com
1 of 4
2011/01/01
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