2SC2482 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING AND, COLOR TV HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS)

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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2SC2482
2SC2482-O
2SC2482-Y
Features
• High Voltage:Vceo=300V
• Small collector output capacitance:Cob=3.0pF(Typ)
Maximum Ratings
Symbol
Rating
Rating
Unit
V_CEO Collector-Emitter Voltage
300
V
V_CBO Collector-Base Breakdown Voltage
300
V
V_EBO
Emitter-Base Voltage
7.0
V
I_C
Collector Current
0.1
A
P_C
T_J
T_STG
Collector Power Dissipation
Operating Junction Temperature
Storage Temperature
0.9
W
-55 to +150
O_C
-55 to +150
O_C
NPN
Epitaxial Silicon
Transistor
TO-92MOD
E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=3mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=240Vdc, IE=0)
ICEO
Collector Cutoff Current
(VCB=220Vdc, IB=0)
IEBO
Emitter Cutoff Current
(VEB=7Vdc, IC=0)
ON CHARACTERISTICS
300
---
300
---
7
---
---
1.0
---
5.0
---
1.0
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
hFE(1)
VCE(sat)
VBE
Cob
DC Current Gain
(IC=20mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
Collector output capacitance
V_CB=20V, IE=0, f=1MHz
SMALL-SIGNAL CHARACTERISTICS
30
150
---
---
1.0
Vdc
---
1.0
Vdc
3
pF
fT
Transistor Frequency
(IC=20mAdc, VCE=10Vdc,
f=30MHz)
50
---
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
O
30-90
Y
90-150
A
B
C
D
F
G
123
H
1. EMITTER
2. COLLECTOR
3. BASE
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.030
B
---
.039
C
---
.031
D
---
.024
E
---
.201
F
.050
G
.050
H
.100
I
.039
J
---
.087
K
---
.024
L
---
.323
M
---
.413
N
---
.161
MM
MIN
MAX
---
.750
---
1.00
---
.80
---
0.60
---
5.10
1.27
1.27
2.54
1.00
---
2.20
---
.60
---
8.20
---
10.50
---
4.10
NOTE
Revision: 1
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1 of 4
2007/12/12