2SC2412-Q Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SC2412-Q
2SC2412-R
2SC2412-S
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Power Dissipation: 0.2W (T_A=25к)
• Collector Current: 0.15A
• Collector-base Voltage: 60V
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
50
V
60
V
7.0
V
0.15
A
0.2
W
-55 to +150
O_C
-55 to +150
O_C
NPN Silicon
Epitaxial Transistors
SOT-23
A
D
C
CB
F
E
B
E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
VCEO
Collector-Emitter Voltage
(IC=1.0mAdc, IB=0)
VCBO
Collector-Base Voltage
(IC=50uAdc, IE=0)
VEBO
Emitter-Base Voltage
(IE=50uAdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=60Vdc,IE=0)
IEBO
Emitter Cutoff Current
(VEB=7.0Vdc, IC=0)
ON CHARACTERISTICS
50
---
---
Vdc
60
---
---
Vdc
7.0
---
---
Vdc
---
---
0.1 uAdc
---
---
0.1 uAdc
hFE
VCE(sat)
fT
DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
Transition Frequency
(VCE=12Vdc, IC=2.0mAdc,
f=100MHz)
120
---
---
---
150 ---
560
---
0.4 Vdc
--- MHz
CLASSIFICATION OF hFE
Rank
Q
Range
120-270
Marking
BQ
R
180-390
BR
S
270-560
BS
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
MAX
2.80
3.04
2.10
2.64
1.20
1.40
.89
1.03
1.78
2.05
.45
.60
.013
.100
.89
1.12
.085
.180
.37
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01