2SC2411-P Datasheet, PDF (1/3 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SC2411-P
2SC2411-Q
2SC2411-R
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• High I_{C. ICMax.= 0.5 A}
• Low V_CE(sat).^{Optimal for low voltage operation.}
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
NPN Silicon
Epitaxial Transistors
Maximum Ratings @ Ta = 25ć(unless otherwise noted)
Symbol
Parameter
Value
IC
Collector Current
0.5
PD
Collector Power Dissipation
0.2
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Unit
A
W
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min TYPE
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc,IB=0)
32
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc,IE=0)
40
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=100uAdc,IC=0)
5.0
ICBO
Collector-Base Cutoff Current
(VCB=20Vdc, IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=4.0Vdc, IC=0)
ON CHARACTERISTICS
HFE
VCE(sat)
)7
DC Current Gain
(IC=100mAdc, VCE=3.0Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Transition Frequency
(VCE=5Vdc,IC=20mAdc,f=100MHZ)
82
250
Max
1
1
390
0.4
Cob
(VCB=10Vdc,IE=0,f=1MHZ)
6.0
Units
V
V
V
µAdc
uAdc
Vdc
MHZ
pF
h CLASSIFICATION OF FE
Rank
P
Range
82-180
Marking
CP
Q
120-270
CQ
R
180-390
CR
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01