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| 2SC2383-R Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor | |||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
⢠Capable of 0.9Watts of Power Dissipation.
⢠Collector-current 1.0A
⢠Collector-base Voltage 160V
⢠Operating and storage junction temperature range: -55OC to +150OC
⢠Marking: C2383
⢠Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
⢠Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICER
IEBO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=150Vdc, IE=0)
Collector Cutoff Current
(VCB=150Vdc, REB=10m OHM)
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
160
Vdc
160
Vdc
6.0
Vdc
1.0
uAdc
10
uAdc
1.0 uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=200mAdc, VCE=5.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VBE
Base-Emitter Voltage
(IC=5.0mAdc, VCE=5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
60
320
1.0
Vdc
0.75 Vdc
fT
Transistor Frequency
(IC=200mAdc, VCE=5.0Vdc )
20
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
R
60-120
O
100-200
Y
160-320
2SC2383-R
2SC2383-O
2SC2383-Y
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92MOD
E
A
B
C
D
F1 2 3 G
H
1.E
2.C
3.B
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.030
B
---
.039
C
---
.031
D
---
.024
E
---
.201
F
.050
G
.050
H
.100
I
.039
J
---
.087
K
---
.024
L
---
.323
M
---
.413
N
---
.161
MM
MIN
MAX
---
.750
---
1.00
---
.80
---
0.60
---
5.10
1.27
1.27
2.54
1.00
---
2.20
---
.60
---
8.20
---
10.50
---
4.10
NOTE
Revision: 5
www.mccsemi.com
1 of 2
2008/02/01
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