2SC2371 Datasheet, PDF (1/1 Pages) Micro Commercial Components – NPN Silicon Power Transistors

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Features
• With TO-126 package
• Video applications

  omponents
20736 Marilla Street Chatsworth

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Maximum Ratings
Symbol
V_CEO
VCBO
V_EBO
IC
P_C
TJ
T_STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
300
V
300
V
7.0
V
0.1
A
10
W
-55 to +150
O_C
-55 to +150
O_C
2SC2371
NPN Silicon
Power Transistors


A
K
D
E
R
B
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min
Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage
300
(I_C=1.0mAdc, I_B=0)
ICBO
Collector-Base Cutoff Current
---
(V_CB=200Vdc,I_E=0)
I_EBO
Emitter-Base Cutoff Current
---
(V_EB=7.0Vdc, I_C=0)
ON CHARACTERISTICS
---
Vdc
0.1
uAdc
0.1
mAdc
h_FE
V _CE(sat)
Forward Current Transfer ratio
(I_C=10mAdc, V_CE=10Vdc)
Collector-Emitter Saturation Voltage
(I_C=30mAdc, I_B=3.0Adc)
40
250
---
---
1.5 Vdc
F
M
N
G
P
L
H
C
12 3
J J _{PIN 1.}
PIN 2.
PIN 3.
EMITTER ^Q
COLLECTOR
BASE


















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Revision: 2
www.mccsemi.com
2003/04/30