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| 2SC2216 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS) | |||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
⢠Capable of 300m Watts of Power Dissipation.
⢠Collector-current : ICM=50mA
⢠Collector-base Voltage:V(BR)CBO= 50V
⢠Operating and storage junction temperature range: -55OC to +150OC
⢠Epoxy meets UL 94 V-0 flammability rating
⢠Moisure Sensitivity Level 1
⢠Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
2SC2216
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V (BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
(I C=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
Collector Cut-off Current
(VCB=50Vdc, IE=0)
Emitter Cut-off Current
(VEB=4.0Vdc, IC=0)
ON CHARACTERISTICS
45
---
Vdc
50
---
Vdc
4.0
---
Adc
---
0.1
uAdc
---
0.1 uAdc
h FE
VCE(sat)
V(BE)sat
fT
DC Current Gain
(IC=12.5mAdc, VCE=12.5Vdc)
Collector-Emitter Saturation Voltage
(I C=15mAdc, IB=1.5mAdc)
Base-Emitter Saturation Voltage
(I C=15mAdc, IB=1.5mAdc)
Transition Frequency
(V CE=12.5Vdc, IC=12.5mAdc,
f=100MHz)
40
140
---
---
0.2
Vdc
---
1.5 Vdc
300
---
MHz
B
C
D
BE
G
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
www.mccsemi.com
1 of 2
2011/01/01
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