2SC2001-M Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• Capable of 0.6Watts of Power Dissipation.
• Collector-current 0. 7A
• Collector-base Voltage 30V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
x Marking: C2001
• Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
Compliant. See ordering information)
2SC2001-M
2SC2001-L
2SC2001-K
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V _(BR)CEO
Collector-Emitter Breakdown Voltage
(I _C=10mAdc, I_B=0)
V_(BR)CBO
Collector-Base Breakdown Voltage
(I _C=100uAdc, I_E=0)
V_(BR)EBO
Emitter-Base Breakdown Voltage
(I _E=100uAdc, I_C=0)
I _CBO
Collector Cutoff Current
(VCB=30Vdc, IE=0)
I_CEO
Collector Cutoff Current
(VCE=20Vdc, IE=0)
I_EBO
Emitter Cutoff Current
(V _EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
25
---
Vdc
30
---
Vdc
5.0
---
Adc
---
0.1
uAdc
----
0.1
Vdc
---
0.1 uAdc
hFE
V _CE(sat)
V_(BE)sat
fT
DC Current Gain
(I _C=100mAdc, V_CE=1.0Vdc)
Collector-Emitter Saturation Voltage
(I _C=700mAdc, I_B=70mAdc)
Base-Emitter Saturation Voltage
(I _C=700mAdc, I_B=70mAdc)
Transition Frequency
(VCE=6.0Vdc, IC=10mAdc, f=30MHz)
90
400
---
---
0.6
Vdc
---
1.2 Vdc
50
---
MHz
CLASSIFICATION OF HFE
Rank
Range
M
90-180
L
135-270
K
200-400
B
C
D
EC
G
B
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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