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2SC1959-O Datasheet, PDF (1/3 Pages) Micro Commercial Components – Power Silicon NPN Transistor
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
2SC1959-O
2SC1959-Y
2SC1959-GR
Features
• Audio frequency low power amplifier applications, driver stage
amplifier applications, switching applications
• Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA
• 1 Watt Amplifier applications
• Complementary to 2SA562TM.
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
x Marking: C1959
• Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
Compliant. See ordering information)
Power Silicon
NPN Transistor
TO-92
A
E
Maximum Ratings
Symbol
Rating
Rating
Unit
VCEO Collector-Emitter Voltage
30
V
VCBO Collector-Base Breakdown Voltage
35
V
VEBO
IC
Emitter-Base Voltage
Collector Current
5.0
V
500
mA
IB
PC
TJ
TSTG
Base Current
Collector Power Dissipation
Operating Junction Temperature
Storage Temperature
100
mA
500
mW
-55 to +150
OC
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
ICBO
Collector-Base Cutoff Current
(VCB=35Vdc, IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
--- --- 0.1 uAdc
--- --- 0.1 uAdc
hFE-1
DC Current Gain*
(IC=100mAdc, VCE=1.0Vdc)
70
---
hFE-2
DC Current Gain*
(IC=400mAdc, VCE=6.0Vdc)
25
---
V CE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
--- 0.1
VBE
Base-Emitter Voltage
(IC=100mAdc, VCE=1.0Vdc)
--- 0.8
fT
Transition Frequency
(VCE=6.0Vdc, IC=20mAdc)
200 300
COBO
Collector Output Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHZ)
--- 7.0
Note: hFE(1) Classification O: 70~140, Y: 120~240, GR: 200~400
hFE(2) Classification O: 25 (Min.), Y: 40 (Min.)
400
----
0.25
1.0
---
---
---
---
Vdc
Vdc
MHZ
pF
B
C
D
ECB
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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