2SC1815-O Datasheet, PDF (1/3 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistor

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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Features
• 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
Amplifier and General Purpose Applications.
• Capable of 0.4Watts of Power Dissipation.
• Collector-current 0.15A
• Collector-base Voltage 60V
• Marking : C1815
x Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS
Compliant. See ordering information)
• Operating and storage junction temperature range:-55^oC to +125^oC
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CEO
Collector-Emitter Breakdown Voltage*
50
Vdc
(I_C=0.1mAdc, I_B=0)
V(BR)CBO Collector-Base Breakdown Voltage
60
Vdc
(I_C=100uAdc, I_E=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
5
Vdc
(I _E=100uAdc,I_C=0)
ICBO
Collector Cutoff Current
0.1
uAdc
(V_CB=60Vdc, I_E=0Adc)
I_CEO
Collector Cutoff Current
(V_CB=50Vdc, I_E=0Adc)
0.1
uAdc
I_EBO
Emitter Cutoff Current
0.1 uAdc
(V_EB=5.0Vdc, I_C=0Adc)
ON CHARACTERISTICS
h_FE(1)
V_CE(sat)
VBE(sat)
V_BE
DC Current Gain*
(I_C=2.0mAdc, V_CE=6.0Vdc)
Collector-Emitter Saturation Voltage
(I_C=100mAdc, I_B=10mAdc)
Base-Emitter Saturation Voltage
(I_C=100mAdc, I_B=10mAdc)
Base-Emitter Voltage
(IE=310mAdc)
70
700
0.25 Vdc
1.0
Vdc
---
1.45 Vdc
SMALL-SIGNAL CHARACTERISTICS
f_T
Transistor Frequency
(IC=1.0mAdc, VCE=10Vdc, f=30MHz)
80
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
O
70-140
Y
120-240
GR
200-400
BL
350-700
2SC1815-O
2SC1815-Y
2SC1815-GR
2SC1815-BL
NPN Silicon
Epitaxial Transistor
TO-92
A
E
B
C
D
G
E_C
B
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
Revision: C
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2011/08/22