2SC1623 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

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2SC1623
Features
• High DC Current Gain: h_FE=200 TYP.(V_CE=6.0V, I_C=1.0mA)
• High voltage: V_CEO=50V
NPN Silicon
Epitaxial Transistors
Maximum Ratings
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_C
T_J
T_STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
50
V
60
V
5.0
V
100
mA
200
mW
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Typ Max Units
ICBO
Collector Cutoff Current
(V_CB=60Vdc,I_E=0)
IEBO
Emitter Cutoff Current
(V_EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
---
---
0.1 uAdc
---
---
0.1 uAdc
h_F
V _CE(sat)
V_BE(SAT)
V_BE
C_ob
f_T
DC Current Gain*
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage*
(I_C=100mAdc, I_B=10mAdc)
Base Saturation Voltage*
(I_C=100mAdc,I_B=10mAdc)
Base Emitter Voltage*
(V_CE=6.0Vdc, I_C=1.0mAdc)
Collector Capacitance
(V_CB=6.0Vdc, I_E=0, f=1.0MHz)
Gain Bandwidth product
(V_CE=6.0Vdc, I_E=10mAdc)
90
200
--- 0.15
--- 0.86
0.55 0.62
---
3.0
---
250
600
---
0.3 Vdc
1.0 Vdc
0.65 Vdc
--- pF
--- MHz
hFE CLASSIFICATION
Marking
L4
L5
h_FE
90-180
135-270
* Pulse Test PW<350us, duty cycle<2%
L6
200-400
L7
300-600
SOT-23
A
D
CB
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 2
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2003/04/30