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2SC1623-L6_11 Datasheet, PDF (1/4 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistors
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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2SC1623-L6
2SC1623-L7
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA)
• High voltage: VCEO=50V
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
50
V
60
V
5.0
V
100
mA
200
mW
-55 to +150
OC
-55 to +150
OC
NPN Silicon
Epitaxial Transistors
SOT-23
A
D
C
CB
F
E
B
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(VCB=60Vdc,IE=0)
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
---
---
0.1 uAdc
---
---
0.1 uAdc
hF
V CE(sat)
VBE(SAT)
VBE
Cob
fT
DC Current Gain*
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage*
(IC=100mAdc, IB=10mAdc)
Base Saturation Voltage*
(IC=100mAdc,IB=10mAdc)
Base Emitter Voltage*
(VCE=6.0Vdc, IC=1.0mAdc)
Collector Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHz)
Gain Bandwidth product
(VCE=6.0Vdc, IE=10mAdc)
200 ---
--- 0.15
--- 0.86
0.55 0.62
---
3.0
---
250
600
---
0.3 Vdc
1.0 Vdc
0.65 Vdc
--- pF
--- MHz
hFE CLASSIFICATION
Marking
L6
h FE
200-400
* Pulse Test PW<350us, duty cycle<2%
L7
400-600
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01
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