2SC1623-L6 Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SC1623-L6
2SC1623-L7
Features
• High DC Current Gain: h_FE=600 Max.(V_CE=6.0V, I_C=1.0mA)
• High voltage: V_CEO=50V
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_C
T_J
T_STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
50
V
60
V
5.0
V
100
mA
200
mW
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
ICBO
Collector Cutoff Current
(V_CB=60Vdc,I_E=0)
IEBO
Emitter Cutoff Current
(V_EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
---
---
0.1 uAdc
---
---
0.1 uAdc
h_F
V _CE(sat)
V_BE(SAT)
V_BE
C_ob
f_T
DC Current Gain*
(IC=1.0mAdc, VCE=6.0Vdc)
Collector Saturation Voltage*
(I_C=100mAdc, I_B=10mAdc)
Base Saturation Voltage*
(I_C=100mAdc,I_B=10mAdc)
Base Emitter Voltage*
(V_CE=6.0Vdc, I_C=1.0mAdc)
Collector Capacitance
(V_CB=6.0Vdc, I_E=0, f=1.0MHz)
Gain Bandwidth product
(V_CE=6.0Vdc, I_E=10mAdc)
200 ---
--- 0.15
--- 0.86
0.55 0.62
---
3.0
---
250
600
---
0.3 Vdc
1.0 Vdc
0.65 Vdc
--- pF
--- MHz
hFE CLASSIFICATION
Marking
L6
h _FE
200-400
* Pulse Test PW<350us, duty cycle<2%
L7
400-600
NPN Silicon
Epitaxial Transistors
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 5
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2007/06/04