2SB744 Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Power Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SB744
Features
• Capable of 10Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 70V
• Operating and storage junction temperature range: -55^OC to
• C⁺a¹s⁵e^0OM^Caterial: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Marking:B744
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
45
70
5.0
3.0
10
-55 to +150
-55 to +150
Unit
V
V
V
A
W
O_C
O_C
PNP Silicon
Power Transistor


A
K
D
E
R
B
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
VCEO(SUS)
V(BR)CBO
V(BR)EBO
Collector-Emitter Sustaining Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=1.0mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=1.0mAdc, IC=0)
ON CHARACTERISTICS
45
---
Vdc
70
---
Vdc
5.0
---
Vdc
hFE(1)
hFE(2)
VCE(sat)
Forward Current Transfer ratio
(IC=20mAdc, VCE=5.0Vdc)
Forward Current Transfer ratio
(IC=0.5Adc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=1.5Adc, IB=0.15Adc)
30
---
---
60
320
---
---
2.0
Vdc
F
M
N
G
P
L
H
C
12 3


















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J J _{PIN 1.}
PIN 2.
PIN 3.
EMITTER ^Q
COLLECTOR
BASE
 





































































 

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2006/05/17