2SB562 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
x Low Frequency Power Amplifier.
x Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
x Complementary pair with 2SD468
2SB562
PNP Epitaxial
Silicon Transistor
TO-92L
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
-20
V
-25
V
-5.0
V
-1.0
A
0.9
W
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
(IC=-10Ó´Adc, IE=0)
BVCEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
BVEBO
Emitter-Base Breakdown Voltage
(IE=-0.01mAdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=-20Vdc,IE=0)
IEBO
Emitter Cutoff Current
(VEB=-4.0Vdc, IC=0)
ON CHARACTERISTICS
-20 ---
---
Vdc
-25 ---
---
Vdc
-5.0 ---
---
Vdc
--- --- -1000 nAdc
--- --- -1000 nAdc
hFE
DC Current gain
(IC=500mAdc, VCE=2.0Vdc)
VBE(on) Base-Emitter On Voltage
(VCE=-2.0Vdc, IC=-500mAdc)
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-0.8Adc, IB=-80mAdc)
fT
Current Gain Bandwidth Product
(VCE=-2.0Vdc, IC=-500mAdc)
Cob
Output Capacitance
(VCB=-10Vdc, IE=0, f=1.0MHz)
(1) hFE Classification B: 85~170, C: 120~240
85 --- 240 ---
--- --- -1.0 Vdc
--- --- -0.5 Vdc
--- 350 --- MHz
--- 38 ---
pF
BC E
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.146
.161
B
.157
---
3.700
4.10
4.000
---
C
---
0.063
---
1.600
D
.014
.018
0.350
0.450
E
.050
.062
F
.185
.201
1.280
4.700
1.580
5.100
G
.307
.323
H
.543
.559
J
.024
.031
7.800
13.80
.600
8.200
14.20
.800
K
.014
.022
L
.050
M
.096
.104
0.350
.550
1.270
2.440
2.640
Revision: 1
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2009/04/24