2SB1386-P Datasheet, PDF (1/4 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SB1386-P
2SB1386-Q
2SB1386-R
Features
x Low Collector Saturation Voltage
x Execllent current-to-gain characteristics
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V_CEO
Rating
Collector-Emitter Voltage
Rating
Unit
-20
V
V_CBO
V_EBO
I_C
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
-30
V
-6.0
V
-2.0
A
P_C
Collector power dissipation
0.5
W
T_J
Junction Temperature
T_STG
Storage Temperature
150
к
-55 to +150
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
V_CE(sat)
f_T
C_ob
Parameter
Collector-base Breakdown Voltage
(I_C=-50uAdc, I_E=0)
Collector-Emitter Breakdown Voltage
(I_C=-1mAdc, I_B=0)
Emitter-base Breakdown Voltage
(I_E=-50uAdc, I_C=0)
Collector-Base Cutoff Current
(V_CB=-20Vdc,I_E=0)
Emitter-Base Cutoff Current
(V_EB=-5Vdc, I_C=0)
DC Current Gain
(I_C=-0.5Adc, V_CE=-2.0Vdc)
Collector-Emitter Saturation Voltage
(I_C=-4Adc, I_B=-0.1Adc)
Transition Frequency
(V_CE=-6Vdc, I_C=-50mAdc,f=30MHz)
Collector output capacitance
(V_CB=-20Vdc, I_E=0,f=1.0MHz)
Min Typ Max Units
-30 ---
---
Vdc
-20 ---
---
Vdc
-6 ---
---
Vdc
--- --- -0.5 uAdc
--- --- -0.5 uAdc
82 --- 390
---
--- --- -1.0 Vdc
120 --- MHz
--- 60 ---
pF
CLASSIFICATION OF HFE (1)
Rank
Range
Marking
P
82-180
BHP
Q
120-270
BHQ
R
180-390
BHR
PNP Silicon
Epitaxial Transistors







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D


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A
B
H
F
2
3
K
E
J
1. Emitter


2. Collector
3. Base















 


 

 

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REF.








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2011/01/01