2SB1188-P Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Plastic-Encapsulate Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Power dissipation: P_CM = 0.5W(T_amb=25ć)
• Collector current: I_CM = -2A
• Collector-base voltage: V_(BR)CBO = -40V
• Operating and storage junction temperature range
T_J, T_stg: -55ć to + 150ć
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO _{(IC=-1mA, IB=0)}
Collector-Base Breakdown Voltage
V(BR)CBO _{(IC=-50­A, IE=0)}
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-50­A, IC=0)
ICBO
Collector cut-off Current
(VCB=-20V, IE=0)
IEBO
Emitter cut-off Current
(VEB=-4V, IC=0)
hFE
DC current gain *
(VCE=-3V, IC=-0.5A)
VCE(sat)
Collector-Emitter Saturation Voltage*
(IC=-2A, IB=-0.2A)
fT
Transition Frequency
(VCE=-5.0Vdc, IC=-0.5Adc,F=30MHZ)
Cob
output capacitance
(VCB=-10V, IE=0, f=1MHz)
-32 --- ---
V
-40 _--- ---
V
-5.0 ---
---
V
---
--- -1.0
uA
---
--- -1.0
uA
82
--- 390
---
---
--- -0.8
V
---
80 --- _MHZ
---
---
65
PF
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
BCP
Q
120-270
BCQ
R
180-390
BCR
2SB1188-P
2SB1188-Q
2SB1188-R
PNP
Plastic-Encapsulate
Transistors
SOT-89
A
B
K
E
C
D
G
H
J
F
1
2
3
BC E
1.Base
2.Collector
3.Emitter















 


 

 











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2011/01/01