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2SB1182-P Datasheet, PDF (1/4 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistors
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
x Low Collector Saturation Voltage
x Execllent current-to-gain characteristics
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
2SB1182-P
2SB1182-Q
2SB1182-R
PNP Silicon
Epitaxial Transistors
Maximum Ratings
Symbol
VCEO
Rating
Collector-Emitter Voltage
Rating
Unit
-32
V
VCBO
VEBO
IC
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
-40
V
-5.0
V
-2.0
A
PC
Collector power dissipation
1.5
W
TJ
Junction Temperature
TSTG
Storage Temperature
150
к
-55 to +150
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Collector-base Breakdown Voltage
(IC=-50uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
Emitter-base Breakdown Voltage
(IE=-50uAdc, IC=0)
Collector-Base Cutoff Current
(VCB=-20Vdc,IE=0)
Emitter-Base Cutoff Current
(VEB=-4Vdc, IC=0)
-40 ---
---
Vdc
-32 ---
---
Vdc
-5 ---
---
Vdc
--- --- -1.0 uAdc
--- --- -1.0 uAdc
hFE(1)
DC Current Gain
82 --- 390
---
(IC=-0.5Adc, VCE=-3.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage
--- --- -0.8 Vdc
(IC=-2Adc, IB=-200mAdc)
fT
Transition Frequency
100 --- MHz
(VCE=-5Vdc, IC=-500mAdc,f=30MHz)
Cob
Collector output capacitance
--- 50 ---
pF
(VCB=-10Vdc, IE=0,f=1.0MHz)
CLASSIFICATION OF HFE (1)
Rank
Range
P
82-180
Q
120-270
R
180-390
DPAK
J
H
C
1
O
2
4 FE
I
3
M
K
V
G
Q
A
L
B
D
PIN 1. BASE
PIN 2.4 COLLECTOR
PIN 3. EMITTER
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.087
0.094
2.20
2.40
B
0.000
0.005
0.00
0.13
C
0.026
0.034
0.66
0.86
D
0.018
0.023
0.46
0.58
E
0.256
0.264
6.50
6.70
F
0.201
0.215
5.10
5.46
G
0.190
4.83
H
0.236
0.244
6.00
6.20
I
0.086
0.094
2.18
2.39
J
0.386
0.409
9.80
10.40
K
0.114
2.90
L
0.055
0.067
1.40
1.70
M
0.063
1.60
O
0.043
0.051
1.10
1.30
Q
0.000
0.012
0.00
0.30
V
0.211
5.35
Revision: A
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2011/06/03