2SB1140-R Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Plastic-Encapsulate Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SB1140-R
2SB1140-S
Features
• Power dissipation: P_CM = 0.5W(T_amb=25ć)
• Collector current: I_CM = -2A
• Collector-base voltage: V_(BR)CBO = -50V
• Operating and storage junction temperature range
T_J, T_stg: -55ć to + 150ć
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Parameter
Collector-Emitter Breakdown Voltage
(IC=-1000­A, IB=0)
Collector-Base Breakdown Voltage
(IC=-10­A, IE=0)
Emitter-Base Voltage
(IE=-10­A, IC=0)
Collector Cut-off Current
(VCB=-50V, IE=0)
Emitter Cut-off Current
(VEB=-5V, IC=0)
DC Current Gain
(VCE=-2V, IC=-0.2A)
DC Current Gain
(VCE=-2V, IC=-1A)
Collector-Emitter Saturation Voltage
(IC=-1A, IB=-50mA)
Base-Emitter Saturation Voltage
(IC=-1A, IB=-50mA)
Transition Frequency
(VCE=-10Vdc, IC=50mAdc, f=200MHz)
Collector output capacitance
(VCB=-10V, IE=0, f=1MHz)
Min Typ Max Unit
-50 --- ---
V
-50 --- ---
V
-5.0 --- ---
V
---
--- -1.0 ­A
---
--- -1.0 ­A
120 --- 340
---
60 --- ---
---
---
--- -0.3
V
---
--- -1.2
V
--- 80 --- MHz
---
--- 80
PF
CLASSIFICATION OF hFE
Rank
R
S
Range
120-240
170-340
Marking
1L
PNP
Plastic-Encapsulate
Transistors
SOT-89
A
B
K
E
C
D
G
H
J
F
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER















 


 

 











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2009/12/08