2SB1073-Q Datasheet, PDF (1/3 Pages) Micro Commercial Components – Silicon PNP epitaxial planer Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Low collector to emitter saturation voltage V_CE(sat)
• Large peak collector current I_CP
• Mini power type package
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings @ 25^OC Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
ICP
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Collector Current
Collector Dissipation
Operating Junction Temperature
Storage Temperature
Rating
Unit
-20
V
-30
V
-7
V
-7
A
-4
A
1
W
150
к
-55 to +150
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
Collector Cutoff Current
(VCB=-30Vdc, IE=0Vdc)
Emitter Cutoff Current
(VEB=-7Vdc, IC=0Vdc)
DC Current Gain (note 1)
(IC=-2Adc, VCE=-2Vdc) (note 2)
Collector-Emitter Saturation Voltage
(IC=-3Adc, IB=-0.1Adc) (note 2)
Current Gain-Bandwidth Product
(VCB=-6Vdc, IE=-50mAdc, f=200MHz)
Output Capacitance
(VCB=-20Vdc, f=1.0MHz, IE=0)
Note: 1. hFE Rank Classification
Rank
Q
hFE
Marking Symbol
120~205
IQ
2. Pulse measurement
Min Typ Max Units
-20 ---
--- Vdc
-30 ---
--- Vdc
-7
---
--- Vdc
---
--- -100 nAdc
---
--- -100 nAdc
120 --- 315 ---
--- -0.6 -1 Vdc
--- 120 --- MHz
---
40
---
pF
R
180~315
IR
2SB1073-Q
2SB1073-R
Silicon
PNP epitaxial planer
Transistors
SOT-89
A
B
K
E
C
D
G
H
J
F
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER















 


 

 











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2011/01/01