2SA812-M4 Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x High DC Current Gain:90Љ h_FEЉ600.(V_CE=-6.0V, I_C=-1mA)
x High voltage: V_CEO=-50V
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_C
T_J
T_STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
-50
V
-60
V
-5.0
V
-100
mA
200
mW
-55 to +150
к
-55 to +150
к
2SA812-M4
2SA812-M5
2SA812-M6
2SA812-M7
PNP Silicon
Epitaxial Transistors
SOT-23
A
D
C
CB
F
E
B
E
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
I_CBO
Collector Cutoff Current
(V_CB=-60Vdc,I_E=0)
I_EBO
Emitter Cutoff Current
(V_EB=-5.0Vdc, I_C=0)
ON CHARACTERISTICS
---
---
-0.1 uAdc
---
---
-0.1 uAdc
h_F
V_CE(sat)
V_BE
f_T
DC Current Gain*
(I_C=-1.0mAdc, V_CE=-6.0Vdc)
Collector Saturation Voltage*
(I_C=-100mAdc, I_B=-10mAdc)
Base Emitter Voltage*
(V_CE=-6.0Vdc, I_C=-1.0mAdc)
Gain Bandwidth product
(V_CE=-6.0Vdc, I_E=-10mAdc)
90
---
--- ---
--- ---
180 ---
600
-0.3
-0.68
---
---
Vdc
Vdc
MHz
CLASSIFICATION OF hFE
Marking
Range
M4
90-180
M5
135-270
M6
200-400
M7
300-600
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01