2SA733-R Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Capable of 0.25Watts of Power Dissipation.
• Collector-current 0.1A
• Collector-base Voltage 60V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
V _(BR)CEO Collector-Emitter Breakdown Voltage 50 --- ---
Vdc
V _(BR)CBO
V _(BR)EBO
(I _C=1.0mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I _C=5.0uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I _E=50uAdc, I_C=0)
60 --- ---
Vdc
5.0 --- ---
Vdc
ICBO
Collector Cutoff Current
(V _CB=60Vdc, I_E=0)
--- --- 0.1 uAdc
IEBO
Emitter Cutoff Current
--- --- 0.1 uAdc
(V _EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
h _FE
DC Current Gain
(IC=1.0mAdc, VCE=6.0Vdc)
V _CE(sat)
Collector-Emitter Saturation Voltage
(I _C=100mAdc, I_B=10mAdc)
SMALL-SIGNAL CHARACTERISTICS
90 200 600 ---
--- 0.18 0.3 Vdc
fT
Transistor Frequency
(I _C=10mAdc, V_CE=6.0Vdc
f=30MHz)
100 180 ---
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
2SA733-R
2SA733-Q
2SA733-P
2SA733-K
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
B
C
D
E
G
BC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
Revision: A
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2011/01/01