2SA684 Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP EPITAXIAL PLANAR TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
x Low Frequency Power Amplifier.
x Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Maximum Ratings
Symbol
Rating
Rating
Unit
VCEO
Collector-Emitter Voltage
-50
V
VCBO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
-60
V
-5.0
V
-1.0
A
0.75
W
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
BVCBO
BVCEO
BVEBO
ICBO
Collector-Base Breakdown Voltage
(IC=-10Ó´Adc, IE=0)
Collector-Emitter Breakdown Voltage
(IC=-2mAdc, IB=0)
Emitter-Base Breakdown Voltage
(IE=-10uAdc, IC=0)
Collector Cutoff Current
(VCB=-20Vdc,IE=0)
-60 --- ---
-50 --- ---
-5.0 --- ---
--- --- -100
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS
hFE
DC Current gain
85
(IC=-500mAdc, VCE=-10Vdc)
VBE(sat) Base-Emitter Saturation Voltage
---
(IB=-50mAdc, IC=-500mAdc)
VCE(sat) Collector-Emitter Saturation Voltage
---
(IC=-500mAdc, IB=-50mAdc)
fT
Current Gain Bandwidth Product
---
(VCE=-10Vdc, IC=50mAdc,f=200MHz)
Cob
Output Capacitance
---
(VCB=-10Vdc, IE=0, f=1.0MHz)
(1) hFE Classification Q: 85~170, R: 120~240 ,S:170~340
--- 340
-0.85 -1.2
-0.2 -0.4
200 ---
20 30
---
Vdc
Vdc
MHz
pF
2SA684
PNP Epitaxial
Silicon Transistor
TO-92L
BC E
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.146
.161
B
.157
---
3.700
4.10
4.000
---
C
---
0.063
---
1.600
D
.014
.018
0.350
0.450
E
.050
.062
F
.185
.201
1.280
4.700
1.580
5.100
G
.307
.323
H
.543
.559
J
.024
.031
7.800
13.80
.600
8.200
14.20
.800
K
.014
.022
L
.050
M
.096
.104
0.350
.550
1.270
2.440
2.640
Revision: 1
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1 of 3
2010/12/02