2SA1980-O Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Low Collector Saturation Voltage: V_CE(sat)=0.3V(Max.)
x Low Output Capacitance: Cob=4.0pF(Typ.)
x Complementary Pair With 2SC5343
x Marking : A1980
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Rating
Unit
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
50
V
50
V
5.0
V
150
mA
625
mW
150
O_C
-55 to +150
O_C
2SA1980-O
2SA1980-Y
2SA1980-G
2SA1980-L
PNP Silicon
Transistors
TO-92
A
E
B
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min ^Typ Max Units
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IB=0)
50
---
---
Vdc
V(BR)CEO Collector-Emitter Breakdown Voltage
50
---
---
Vdc
(IC=10mAdc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
5.0 ---
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=50Vdc,IE=0)
--- --- 0.1 uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
--- --- 0.1 uAdc
ON CHARACTERISTICS
hFE
VCE(sat)
fT
Cob
NF
Forward Current Transfer ratio*
(IC=2.0Adc, VCE=6.0Vdc)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
Transition Frequency
(VCE=10Vdc, IC=1.0mAdc)
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
Noise Figure
(VCE=6.0Vdc, IC=0.1mAdc,
f=1.0KHz, Rg=10KÓ¨)
70
--- 700
---
--- --- 0.3 Vdc
80 --- --- MHz
--- 4.0 7.0
pF
--- --- 10
dB
* hFE rank / O: 70-140, Y:120-240, G:200-400, L:300-700
C
D
G
E_CB
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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