2SA1774-Q Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
2SA1774-Q
2SA1774-R
2SA1774-S
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Small Package
• Mounting:any position
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings @ Ta = 25ć(unless otherwise noted)
Symbol
Parameter
Value
IC
Collector Current
-0.15
PD
Total Device Dissipation
0.15
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Unit
A
W
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
-50
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50uAdc,IE=0)
-60
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-50uAdc,IC=0)
-7.0
ICBO
Collector-Base Cutoff Current
(VCB=-60Vdc, IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=-6.0Vdc, IC=0)
ON CHARACTERISTICS
HFE
VCE(sat)
FT
DC Current Gain
(IC=-1.0mAdc, VCE=-6.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-5.0mAdc, IB=-5.0mAdc)
Transition Frequency
(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)
120
140(Typ)
Cob
Collector Output Capacitance
(VCB=-12Vdc,IC=0Adc,f=1MHZ)
h CLASSIFICATION OF FE
Rank
Q
R
Range
120-270
180-390
Marking
FQ
FR
Max
Units
V
V
V
-0.1
µAdc
-0.1
uAdc
560
-0.5
Vdc
MHZ
5
PF
S
270-560
FS
PNP Silicon
Epitaxial Transistor
SOT-523
A
D
E
C
BC
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
NOTE
Revision: A
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2011/01/01