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| 2SA1585S Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors | |||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
2SA1585S
2SA1585S-Q
2SA1585S-R
Features
⢠Power dissipation: PD = 0.4W(Tamb=25Ä)
⢠Collector current: ICM = -2A
⢠Collector-base voltage: V(BR)CBO = -20V
⢠Operating and storage junction temperature range
TJ, Tstg: -55Ä to + 150Ä
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Parameter
Collector-Emitter Voltage
(IC=-50ÂA, IE=0)
Collector-Base Voltage
(IC=-1ÂA, IB=0)
Emitter-Base Voltage
(IE=-50ÂA, IC=0)
Collector cut-off Current
(VCB=-20V, IE=0)
Emitter cut-off Current
(VEB=-5V, IC=0)
DC current gain
(VCE=-2V, IC=-0.1A)
Collector-Emitter Saturation Voltage
(IC=-2A, IB=-0.1A)
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
Min Typ Max Unit
-20 --- ---
V
-20 --- ---
V
-6.0 --- ---
V
---
--- -0.1 ÂA
---
--- -0.1 ÂA
120 --- 390
---
---
--- -0.82
V
200 --- --- MHz
CLASSIFICATION OF hFE
Rank
Q
Range
120-170
Marking
1815Q
R
180-390
1815R
PNP
Plastic-Encapsulate
Transistors
TO-92S
A
E
B
C
12 3
D
G
1.EMITTER
2.COLLECTOR
3.BASE
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.16
B
.12
C
.59
---
D
.02
E
.08
G
.20
MM
MIN
MAX
4.00
3.00
15.00
---
0.45
2.00
5.00
NOTE
Revision: 2
www.mccsemi.com
2007/03/02
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