2SA1213-O Datasheet, PDF (1/4 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SA1213-O
2SA1213-Y
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Low Saturation voltage: V_CE(sat)=0.5V(max.)(I_C=1.0A)
x Small flat package
x P_C=1.0 to 2.0W(mounted on ceramic substrate)
x High Speed Switching Time : tstg _{=1.0µs(typ.)}
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Rating
Rating
Unit
V_CEO
V_CBO
V_EBO
I_C
I_B
P_C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector power dissipation
-50
V
-50
V
-5.0
V
-2.0
A
-0.4
A
0.5
1.0*
W
T_J
Junction Temperature
150
к
T_STG
Storage Temperature
-55 to +150
к
* Mounted on ceramic substrate (250mm² x 0.8t)
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
V_(BR)CEO Collector-Emitter Breakdown Voltage
-50 ---
---
Vdc
(I_C=10mAdc, I_B=0)
I_CBO
Collector-Base Cutoff Current
--- --- -0.1 uAdc
(V_CB=50Vdc,I_E=0)
I_EBO
Emitter-Base Cutoff Current
--- --- -0.1 uAdc
(V_EB=5.0Vdc, I_C=0)
ON CHARACTERISTIC
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
DC Current Gain
(I_C=0.5Adc, V_CE=2.0Vdc)
DC Current Gain *
(I_C=2.0Adc, V_CE=2.0Vdc)
Collector-Emitter Saturation Voltage
(I_C=1.0Adc, I_B=0.05Adc)
Base-Emitter Saturation Voltage
(I_C=1.0Adc,I_B=0.05Adc)
Transition Frequency
(V_CE=2.0Vdc, I_C=0.5Adc)
Collector output capacitance
(V_CB=10Vdc, f=1.0MHz)
70 --- 240
20 --- ---
--- --- -0.5
--- --- -1.2
100 120 ---
--- 40 ---
---
---
Vdc
Vdc
MHz
pF
CLASSIFICATION OF HFE (1)
Rank
Range
Marking
O
70-140
NO
Y
120-240
NY
PNP Silicon
Epitaxial Transistors




SOT-89






A


B
K






E

<sup>C



D</sup>


G
H


F
J










1
2
3


1. Base
2. Collector
3. Emitter













 
 

 

 








































 










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2011/01/01