2SA1201-O Datasheet, PDF (1/3 Pages) Micro Commercial Components – PNP Silicon Power Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Power amplifier applications
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
IB
PC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector power dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
Note 1: Mounted on ceramic substrate (250mm² x 0.8t)
Rating
-120
-120
-5.0
-800
-160
500
1000(Note 1)
150
-55 to +150
Unit
V
V
V
mA
mA
W
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ. Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* -120 ---
---
Vdc
(IC=-10mAdc, IB=0)
V(BR)EBO Collector-Emitter Breakdown Voltage*
-5
---
Vdc
(IE=-1mAdc, IC=0)
ICBO
Collector-Base Cutoff Current
(VCB=-120Vdc,IE=0)
--- --- -0.1 uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=-5.0Vdc, IC=0)
--- --- -0.1 uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=-0.1Adc, VCE=-5.0Vdc) (Note 2)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-0.5Adc, IB=-50mAdc)
VBE
Base-Emitter Voltage
(IC=-0.5Adc, VCE=-5.0Vdc)
fT
Transition Frequency
(IC=-0.1Adc, VCE=-5.0Vdc)
Cob
Collector Output Capacitance
(VCB=-10V, IE=0, f=1MHz)
CLASSIFICATION OF HFE (1)
80 --- 240
--- --- -1.0
--- --- -1.0
--- 120 ---
--- --- 30
---
Vdc
Vdc
MHz
pF
Rank
Range
O
80-160
Y
120-240
Marking
DO
DY
2SA1201-O
2SA1201-Y
PNP Silicon
Power Transistors


SOT-89




A
B
K








E

^C




D


G
H
J


F










1
2
3


1.BASE
2.COLLECTOR
3.EMITTER















 


 

 











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2011/01/01