2SA1162-O Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SA1162-O
2SA1162-Y
2SA1162-GR
Features
• Capable of 0.15Watts of Power Dissipation.
• Collector-current: 0.15A
• Collector-base Voltage: -50V
• Operating and storage junction temperature range: -55к to +150к
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
V(BR)CBO Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-100uAdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=-50Vdc, IE=0)
IEBO
Emitter Cutoff Current
(VEB=-5.0Vdc, IC=0)
ON CHARACTERISTICS
-50
---
Vdc
-50
---
Vdc
-5
---
Vdc
---
-0.1
uAdc
---
-0.1
uAdc
hFE
DC Current Gain
(IC=-2.0mAdc, VCE=-6.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-100mAdc, IB=-10mAdc)
SMALL-SIGNAL CHARACTERISTICS
70
400
---
---
-0.3
Vdc
fT
Transistor Frequency
80
(IC=-1.0mAdc, VCE=-10Vdcz)
Cob
Collector Output Capacitance
---
(VCB=-10Vdc, IE=0, f=1MHz)
NF
Noise Figure
---
(VCE=-6Vdc, IC=0.1mA, f=1KHz, Rg=10K¡)
---
MHz
7
pF
10
dB
CLASSIFICATION OF HFE (1)
Rank
O
Y
GR
Range
70-140
120-240
200-400
Marking
SO
SY
SG
PNP Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
MAX
2.80
3.04
2.10
2.64
1.20
1.40
.89
1.03
1.78
2.05
.45
.60
.013
.100
.89
1.12
.085
.180
.37
.51
Suggested Solder
Pad Layout
.031
.800
.035
.900
NOTE
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01