2SA1037-Q Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
2SA1037-Q
2SA1037-R
2SA1037-S
Features
• Small Package
• Mounting:any position
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings @ Ta = 25ć(unless otherwise noted)
Symbol
Parameter
Value
IC
Collector Current
-0.15
PD
Total Device Dissipation
0.2
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Unit
A
W
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
-50
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50uAdc,IE=0)
-60
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-50uAdc,IC=0)
-6.0
ICBO
Collector-Base Cutoff Current
(VCB=-60Vdc, IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=-6.0Vdc, IC=0)
ON CHARACTERISTICS
DC Current Gain
HFE
(IC=-1.0mAdc, VCE=-6.0Vdc)
120
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-5.0mAdc, IB=-5.0mAdc)
)7
Transition Frequency
(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)
120
h CLASSIFICATION OF FE
Rank
Q
R
Range
120-270
180-390
Marking
FQ
FR
Max
Units
V
V
V
-0.1
µAdc
-0.1
uAdc
560
-0.5
Vdc
MHZ
S
270-560
FS
PNP Silicon
Epitaxial Transistors
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01