2SA1036-P Datasheet, PDF (1/3 Pages) Micro Commercial Components – PNP Silicon Epitaxial Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2SA1036-P
2SA1036-Q
2SA1036-R
Features
• Large I_{C. ICMax.= -0.5 A}
• Low V_CE(sat). _{Ideal for low-voltage operation.}
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings @ Ta = 25ć(unless otherwise noted)
Symbol
Parameter
Value
IC
Collector Current
-0.5
PD
Collector Power Dissipation
0.2
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Unit
A
W
к
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min TYPE
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
-32
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc,IE=0)
-40
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-100uAdc,IC=0)
-5.0
ICBO
Collector-Base Cutoff Current
(VCB=-20Vdc, IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=-4.0Vdc, IC=0)
ON CHARACTERISTICS
HFE
VCE(sat)
)7
DC Current Gain
(IC=-10mAdc, VCE=-3.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-100mAdc, IB=-10mAdc)
Transition Frequency
(VCE=-5Vdc,IC=-20mAdc,f=100MHZ)
82
200
Cob
(VCB=-10Vdc,IE=0,f=1MHZ)
7
Max
-1
-1
390
-0.4
Units
V
V
V
µAdc
uAdc
Vdc
MHZ
pF
h CLASSIFICATION OF FE
Rank
P
Range
82-180
Marking
HP
Q
120-270
HQ
R
180-390
HR
PNP Silicon
Epitaxial Transistors
SOT-23
A
D
C
CB
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01