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| 2SA1015-O Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Plastic-Encapsulate Transistor | |||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
⢠Capable of 0.4Watts of Power Dissipation.
⢠Collector-current 0.15A
⢠Collector-base Voltage 50V
⢠Operating and storage junction temperature range: -55OC to +150OC
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x Marking:A1015
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Collector Cutoff Current
(VCB=50Vdc, IE=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
50
---
Vdc
50
---
Vdc
---
0.1 uAdc
---
0.1 uAdc
hFE
DC Current Gain
(IC=2.0mAdc, VCE=6.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
VBE(sat)
VBE
Base-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
Base-Emitter Voltage
(IE=310mAdc)
SMALL-SIGNAL CHARACTERISTICS
70
400 ---
---
0.3
Vdc
---
1.1
Vdc
---
1.45 Vdc
fT
Transistor Frequency
(IC=1.0mAdc, VCE=10Vdc, f=30MHz)
80
---
MHz
CLASSIFICATION OF HFE (1)
Rank
Range
O
70-140
Y
120-240
GR
200-400
2SA1015-O
2SA1015-Y
2SA1015-GR
PNP Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
B
C
D
EC B
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.170
.190
B
.170
.190
C
.550
.590
D
.010
.020
E
.130
.160
G
.010
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
Revision: 5
www.mccsemi.com
1 of 2
2007/03/01
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