2SA1013-R Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Epitaxial Silicon Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
• Capable of 0.9Watts of Power Dissipation.
• Collector-current -1.0A
• Collector-base Voltage -160V
• Operating and storage junction temperature range: -55к to +150к
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL rating 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10mAdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=-150Vdc, IE=0)
ICEO
Collector Cutoff Current
(VCB=-120Vdc, IE=0)
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0)
ON CHARACTERISTICS
-160
-160
-6.0
---
---
---
---
Vdc
---
Vdc
---
Vdc
-1.0
uAdc
-10
uAdc
-1.0 uAdc
hFE(1)
DC Current Gain
(IC=-200mAdc, VCE=-5.0Vdc)
hFE(2)
DC Current Gain
(IC=-50mAdc, VCE=-5.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
VBE
Base-Emitter Saturation Voltage
(IC=-5.0mAdc, VCE=-5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
65
310
---
40
---
---
---
-1.5
Vdc
---
-0.75
Vdc
fT
Transistor Frequency
(IC=-200mAdc, VCE=-5.0Vdc,
f=30MHz)
-15
---
MHz
CLASSIFICATION OF HFE (1)
Rank
R
O
Y
Range
60-120
120-200
200-300
2SA1013-R
2SA1013-O
2SA1013-Y
PNP
Epitaxial Silicon
Transistor
TO-92MOD
E
A
B
C
D
F
G
123
H
1. EMITTER
2. COLLECTOR
3. BASE
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.030
B
---
.039
C
---
.031
D
---
.024
E
---
.201
F
.050
G
.050
H
.100
I
.039
J
---
.087
K
---
.024
L
---
.323
M
---
.413
N
---
.161
MM
MIN
MAX
---
.750
---
1.00
---
.80
---
0.60
---
5.10
1.27
1.27
2.54
1.00
---
2.20
---
.60
---
8.20
---
10.50
---
4.10
NOTE
Revision: 4
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2008/02/01