2N7002W_11 Datasheet, PDF (1/4 Pages) Micro Commercial Components – N-Channel Enhancement Mode Field Effect Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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2N7002W
Features
• Low ON-Resistance
• Low Input Capacitance
• Low Gate Threshold Voltage
• Fast Switching Speed
• Low Input/Output Leakage
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Mechanical Data
• Case: SOT-323, Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking: K72
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 625K/W Junction To Ambient
Parameter
Symbol Value Unit
Drain-Source-Voltage
V_DSS
60
V
Drain-Gate Voltage R_GSƙ1.0MΩ V_DGR
60
V
Gate-Source-Voltage Continuous
Pulsed
V_GSS
±20
±40
V
Drain Current (Note 1) Continuous
Continuous @ 100+
I_D
Pulsed
115
73
mA
800
Total Power Dissipation (Note 1)
Derating above T_A = 25+
P_D
200
mW
1.60 mW/+
Note: 1. Valid provided that terminals are kept at specified ambient
temperature.
2. Pulse width ƙ300µs, duty cycle ƙ2%
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
A
D
D
BC
G
S
F
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
Suggested Solder
Pad Layout
r 0.70
NOTE
0.90
1.90
0.65
0.65
Revision: A
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2011/01/01