2N7002V Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

MCC

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
Maximum Ratings @ 25^OC Unless Otherwise Specified
Symbol
Rating
Rating
Unit
VDSS
VDGR
VGSS
Drain-source Voltage
Drain-Gate Voltage
Gate-source Voltage
60
V
60
V
±20
V
ID
PD
RθJA
TJ
Drain Current
Total Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
280
150
833
-55 to +150
mA
mW
℃/W
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
V(BR)DSS
Vth(GS)
IGSS
IDSS
Drain-Source Breakdown Voltage*
(VGS=0Vdc, ID=10µAdc)
Gate-Threshold Voltage*
(VDS=VGS, ID=250µAdc)
Gate-body Leakage*
(VDS =0Vdc, VGS =±20Vdc)
Zero Gate Voltage Drain Current*
(VDS =60Vdc, VGS =0Vdc)
(VDS =0Vdc, VGS =±20Vdc, Tj=125℃)
ID(ON)
rDS(on)
gFS
Ciss
COSS
CrSS
On-state Drain Current*
(VDS =7.5Vdc, VGS =10Vdc)
Drain-Source On-Resistance*
(VGS=5Vdc, ID=50mAdc)
(VGS=10Vdc, ID=500mAdc)
Forward Tran Conductance*
(VDS=10Vdc, ID=200mAdc)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS=25Vdc,
VGS =0Vdc
f=1MHz
Switching
Min Typ Max Units
60 70
---
Vdc
1.0 ---
2.5
Vdc
---
--- ±0.1 µAdc
--- ---
--- ---
0.5 1.0
1
µAdc
500
---
Adc
---
---
3.0
Ω
---
---
2.0
80 ---
---
ms
--- ---
50
--- ---
25
pF
--- ---
5
td(on)
Turn-on Time
VDD=30Vdc,
VGEN=10Vdc
--- ---
20
td(off)
Turn-off Time
RL=150Ω,ID=200mA,
RG=25Ω
---
---
20
ns
* Pulse test, pulse width≦300μs, duty cycle≦20%
2N7002V
N-Channel MOSFET
SOT-563
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.011
0.15
0.30
B
.043
.049
1.10
1.25
C
.061
.067
1.55
1.70
D
.020
0.50
G
.035
.043
0.90
1.10
H
.059
.067
1.50
1.70
K
.022
.023
0.56
0.60
L
.004
.011
0.10
0.30
M
.004
.007
0.10
0.18
Revision: 1
www.mccsemi.com
2005/01/25