2N7002DW Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
• Power Dissipation: 0.2W(Tamb=25ć)
• Drain Current: 115mA
• Drain-source Voltage: 60V
• Operating Junction Temperature: -55 to +150к
• Storage Temperature: -55 to +150к
• Marking: K72
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
V(BR)DSS
Vth(GS)
IGSS
IDSS
ID(ON)
rDS(on)
gFS
Ciss
COSS
CrSS
Drain-Source Breakdown Voltage*
(VGS=0Vdc, ID=10µAdc)
Gate-Threshold Voltage*
(VDS=VGS, ID=250µAdc)
Gate-body Leakage*
(VDS =0Vdc, VGS =f20Vdc)
Zero Gate Voltage Drain Current*
(VDS =60Vdc, VGS =0Vdc)
(VDS =60Vdc, VGS =0Vdc, Tj=125к)
On-state Drain Current*
(VDS =7.5Vdc, VGS =10Vdc)
Drain-Source On-Resistance*
(VGS=5Vdc, ID=50mAdc)
(VGS=10Vdc, ID=500mAdc)
Forward Transconductance*
(VDS=10Vdc, ID=200mAdc)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS=25Vdc,
VGS =0Vdc
f=1MHz
Switching
Min Typ Max Units
60 70
---
Vdc
1.0 1.5 2.0 Vdc
--- --- f10 nAdc
--- ---
--- ---
0.5 1.0
1 µAdc
500
---
Adc
--- 3.2 7.5
Ω
--- 4.4 13.5
80 ---
---
ms
---
22
50
--- 11
25
pF
---
2
5
td(on)
Turn-on Time
VDD=30Vdc,
VGEN=10Vdc
---
7
20
td(off)
Turn-off Time
RL=150Ω,ID=200mA,
RG=25Ω
---
11
20
ns
* Pulse test, pulse width̰300­s, duty cyclḛ20%
2N7002DW
N-Channel MOSFET
SOT-363
G
B
C
A
H
K
M
J
D
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C
.085
.096
2.15
2.45
D
.026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
NOTE
Revision: 4
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2008/12/31