2N6045 Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Power Darlington Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
GENERAL DESCRIPTION
• Silicon NPN medium power Darlington transistors in a plastic envelope, primarily for
use in low-speed switching and general purpose.
• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
QUICK REFERENCE DATA
2N6045
NPN
Silicon Power
Darlington Transistor
SYMBOL
PARAMETER
CONDITION
VCESM
VCEO
Collector-emitter voltage peak value ^VBE^=0V
Collector-emitter voltage (open base)
IC
ICM
PTOT
VCEsat
Collector current (DC)
Collector current peak value
Total power dissipation
Collector -emitter saturation voltage
Tmb<=25^oC
IC=8A;
IB=0.08A
Icsat
Collector saturation current
VBE
Emitter forward voltage
IE=8A
tf
Fall time
IC=3.0A;
IB1=-IB2=0.3A;
VCC=30V
MIN
100
100
8.0
16
75
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS MIN
VCESM
Collector-emitter voltage peak value VBE=0V
VCEO
Collector-emitter voltage (open base)
VEBO
Emitter-base voltage (open collector)
IC
Collector current (DC)
IB
Base current(DC)
IBM
PTOT
Tstg
Base current peak value
Total power dissipation
Storage temperature
Tmb<=25^oC
-60
Tj
Junction temperature
-60
ELECTRICAL CHARACTERISTICS
MAX UNIT
V
V
A
A
W
4.0 V
A
V
us
MAX UNIT
100 _V
100 _V
5
V
8
A
0.12 A
A
75 W
150
o_C
150
o_C
SYMBOL
PARAMETER
ICBO
Collector-base cut-off current
IEBO
Emitter-base cut-off current
V(BR)CEO Collector-emitter breakdown voltage
VCEsat1 Collector-emitter saturation voltage
VCEsat2 Collector-emitter saturation voltage
hFE1
DC current gain
hFE2
DC current gain
fT
Transition frequency at f=1MHz
CC
Collector capacitance at f=1MHz
tON
On times
tS
Turn-off storage time
tF
Fall time
CONDITION
VCB=100V
VEB =5V
IC=100mA
IC=3.0A,IB=12mA
IC=8A,IB=80mA
IC=3A,VCE=4V
IC=8A,VCE=4V
IC=0.5A,VCE=4V
VCB=10V
IC=3A,IB=0.3A,
VCC=30V
IC=3A,IB=0.3A,
VCC=30V
IC=3A,IB=0.3A,
VCC=30V
MIN
100
1000
100
MAX UNIT
20 uA
2.0 mA
V
2.0 V
4.0 V
20000
MHz
pF
us
us
us
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
TO-220
B
C
F
S
Q
A
12 3
H
T
U
K
V
L
D
G
J
R
N
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.140
.190
3.56
4.82
D
.020
.045
0.51
1.14
F
.139
.161
3.53
4.09
∅
G
.190
.110
2.29
2.79
H
---
.250
---
6.35
J
.012
.025
0.30
0.64
K
.500
.580
12.70
14.73
L
.045
.060
1.14
1.52
N
.190
.210
4.83
5.33
Q
.100
.135
2.54
3.43
R
.080
.115
2.04
2.92
S
.045
.055
1.14
1.39
T
.230
.270
5.84
6.86
U
-----
.050
-----
1.27
V
.045
-----
1.15
-----
Revision: A
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2011/01/01