2N5832 Datasheet, PDF (1/1 Pages) Micro Commercial Components – NPN Transistor Plastic-case Bipolar

MCC
Features
• Through Hole Package

  omponents
21201 Itasca Street Chatsworth

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Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
140
Vdc
(IC=300mAdc)
V(BR)CBO
Collector-Base Breakdown Voltage
160
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
Vdc
ICBO
Collector-Base Breakdown Current
(VCE=120Vdc)
50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
VCE(sat)
(IC=10mAdc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc)
175
500
0.2
Vdc
2N5832
Plastic-case Bipolar
NPN Transistor
TO-92
A
E
B
C
D
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc)
Cob
Output Capacitance
NF
Noise Figure
Note: Maximum at typical JEDEC condition
V(BR)CER @ R=10 OHMS
100
MHz
4.0
pF
----
dB
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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